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| SFP50N06R Silicon N-Channel MOSFET Features RDS(on)(Max0.023)@VGS=10V Gate Charge(Typical 25nC) Maximum Junction Temperature Range(175) General Description This Power MOSFET is produced using Winsemi's trench layout-based process. This technology improves the performances compared with standard parts from various sources . All of these power are designed for applications in switching regulators , MOSFET switching convertors , motor and relay drivers , and drivers for high power bipolar switching transistors demanding high speed and low gate drive power. Absolute Maximum Ratings Symbol VDSS ID Continuous Drain Current(@TC=100) IDM VGS EAS EAR dv/dt PD Derating Factor above25 TSTG TJ Operating Junction Temperature Storage Temperature 0.8 -55~175 150 W/ Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC=25) 35 200 20 493 12.0 7.0 120 A A V mJ mJ V/ns W Parameter Drain to Source Voltage Continuous Drain Current(@TC=25) Value 60 50 Units V A Thermal Characteristics Symbol RQJC RQJA RQJA parameter Min. Thermal Resistance, Junction-to-case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient - Value Typ. Max. 0.5 1.24 62.5 units /W /W /W Rev.A Aug.2010 Copyright@WinSemi Semiconductor Co., Ltd., All right reserved. SFP50N06R Electrical Characteristics TC=25 Characteristics Drain-Source Breakdown Voltage Breakdown Voltage Temperature coefficient Drain-source Leakage Current BVDSS/ TJ IDSS Symbol BVDSS Test Conditions VGS=0V, ID=250uA ID=250uA, Min 60 Typ - Max - Units V referenced to 25 VDS=60V,VGS=0V VDS=48V,TC=125 2.0 ID=250uA 0.07 - 10 100 100 -100 4.0 V/ uA uA nA nA V Gate-Source Leakage, Forward Gate-source Leakage, Reverse Gate Threshold Voltage IGSS VGS=20V,VDS=0V VGS=-20V,VDS=0V VGS(th) VDS=VGS, Static Drain-Source On-state Resis-tance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-source Charge Gate-Drain Charge(Miller Charge) RDS(ON) VGS=10V, ID=25.0A 0.018 1050 460 70 20 100 80 85 32 8 12 0.022 1365 600 90 50 210 ns 170 180 42 nC pF Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VGS=0V,VDS=25V, f=1MHz - VDD=30V, ID=25.0A,RG=25 Pulse Width300us, Q>50 VDS=48V, VGS=10V, ID=50A - Source-Drain Ratings and Characteristics Characteristics Maximum Continuous SourceDiode Forward Current Maximum Pulsed Source-Diode Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VSD trr Qrr IS=50A,VGS=0V IS=50A,VGS=0V, dIF/dt=100A/us 50 70 1.5 V ns uC ISM 200 Symbol IS Test Conditions - Min - Typ - Max 50 Units A Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=230uH,IAS=50A,VDD=50V,RG=25,Starting TJ=25 3.ISD50A,di/dt300A/us, VDD Steady, all for your advance SFP50N06R Fig1.On-State Characteristics Fig2.Transfer Characteristics Fig3.On Resistance Variation vs. Drain Current and Gate Voltage Fig4.On State Current vs. Allowable Case Temperature Fig5.Capacitance Characteristics Fig6.Gate charge Characteristics 3/7 Steady, all for your advance SFP50N06R Fig7.Breakdown Voltage Variation vs.Junction temperature Fig8.On-Resistance Variation vs.Junction Temperature Fig9.Maximum safe Operating Area Fig10.Maximum Drain Current vs.Case Temperature Fig11.Transient thermal Response Curve 4/7 Steady, all for your advance SFP50N06R Fig12.Gate Charge Test Circuit&Waveforms Fig12.Gate Charge Test Circuit& Waveforms Fig13.Switching Time Test Circuit&Waveforms Fig14.Unclamped Inductive Switching Test Circuit & Waveform 5/7 Steady, all for your advance SFP50N06R Fig15. Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Steady, all for your advance SFP50N06R To-220 Package Dimension Unit:mm 7/7 Steady, all for your advance |
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